PIN结构GaInAsSb红外探测器的PSPICE模型  

PSPICE model of GaInAsSb infrared detectors with PIN structure

作　　者：李志怀[1] 夏冠群[1] 程宗权[1] 黄文奎[1] 伍滨和[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《功能材料与器件学报》2003年第1期34-38,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金资助(No.60176011)

摘　　要：研究了PIN结构GaInAsSb红外探测器的暗电流特性,建立了器件的PSPICE模型。模拟结果与实际测试结果基本符合。计算结果表明,器件表面和内部的缺馅及表面复合电流对器件的反向特性起主要作用,当反向偏压大于0.35V,缺陷引起的隧穿电流对器件暗电流起主要作用。Dark current of GaInAsSb Detectors with PIN structure was studied, and PSPICE model ofthe devices was set up. Simulated results coincide with tested results. Calculation shows that the elements dominated reverse characteristics of the devices are G-R current and surface recombinationcurrent, and when the reverse voltage is higher than 0.35V, trap assisted tunneling current dominatesdark current of the devices.

关 键 词：GAINASSB 红外控制器 PSPICE 

分 类 号：TN365[电子电信—物理电子学]