低阈值稳定基横模1.3μm InGaAsP/InP掩埋新月型激光器  

1.3 μm InGaAsP/InP Buried Crescent Semiconductor Lasers with Low Threshold Current and Stable Fundamental Transverse Mode

作　　者：肖建伟[1] 衣茂斌[1] 薄报学[1] 苗忠礼 马玉珍 高鼎三[1] 

机构地区：[1]吉林大学电子科学系

出　　处：《吉林大学自然科学学报》1989年第4期59-62,共4页Acta Scientiarum Naturalium Universitatis Jilinensis

摘　　要：采用二次液相外延技术研制了1.3μm InGaAsP/InP掩埋新月型激光器。测试结果表明,典型室温连续工作电流为20mA,最低10mA。在3～5倍阈值工作电流下仍能以稳定的基横模激射。1.3μm lnGaAsP/InP buried crescent lasers were fabricated in our laboratory. The typical and the lowest threshold currents of the devices are 20 mA and 10 mA, respectively. These lasers could maintain stable fundamental transverse mode operation to 5 times of threshold current.

关 键 词：半导体激光器 低阈值电流 基横模 

分 类 号：TN241[电子电信—物理电子学]