AlN基板材料研究进展  

Advances in Study on Aluminum Nitride Packaging Materials

作　　者：孟献丰[1] 陆春华[1] 倪亚茹[1] 许仲梓[1] 

机构地区：[1]南京工业大学材料科学与工程学院,南京210009

出　　处：《材料导报》2003年第3期35-37,共3页Materials Reports

摘　　要：氮化铝基板因具有高热导率、低介电常数、与硅相匹配的热膨胀系数等优良的物理性能,被誉为新一代理想基板材料。详细综述了AlN板的国内外研究现状及其导热机理;介绍并分析了基片制备的工艺流程和影响因素;概括总结了AlN基板的金属化和烧结工艺方面的研究进展;展望了AlN基板的发展趋势和前景。With excellent characteristics such as high thermal conduction,low dielectric constant and an expansion coefficient that matches with silicon,substrate of A1N is considered as an ideal substrate material. This paper describes in detail new progress abroad and at home and thermal conduction mechanism,introduces and analyzes technological process and influencing factors for A1N package preparation,sums up progress in-metalization and sintering technology,and finally suggests the development trend of AlN.

关 键 词：AlN基板材料 研究进展 导热机理 金属化 烧结 氮化铝 集成电路 制备 

分 类 号：TN4[电子电信—微电子学与固体电子学]