注氟CMOS运算放大器电路的电离辐照响应特性  

The total dose radiation responses of the F-implanted CMOS amplifiers

作　　者：陆妩[1] 郭旗[1] 余学锋[1] 任迪远[1] 郑毓峰[2] 张军[2] 

机构地区：[1]中国科学院新疆物理研究所,乌鲁木齐830011 [2]新疆大学,乌鲁木齐830046

出　　处：《核技术》2003年第4期291-294,共4页Nuclear Techniques

摘　　要：本文研究了注氟(F)与未注F两种不同工艺CMOS运算放大器电路的电离辐照响应特性及变化规律。结果显示:在MOSFET的栅场介质中适量注入F,能明显地抑制辐照感生氧化物电荷的积累和界面态密度的增长,减少漏电流及阈电压漂移,有助于改善CMOS运算放大器电路内部各单管的辐照敏感性,从而使运放电路的整体抗辐射能力得到显著提高。The characteristics of the total dose radiation responses of CMOS amplifiers with normal and F-implanted process were studied and compared. It is shown that the implantation of the moderate amount of fluorine ions into the gate oxide of CMOS amplifiers could visibly restrain the growing of oxide charges and interface states, reduce the leaked current, and lessen the shifts of threshold voltage induced by the total dose radiation.

关 键 词：注氟CMOS运算放大器电路 Γ辐照 氧化物电荷 界面态 钴60 抗辐射能力 电离辐射 

分 类 号：TN72[电子电信—电路与系统] O571.33[理学—粒子物理与原子核物理]