氦诱生微孔对硅二极管漏电流特性的改善  

Improvement of Leakage Current Characteristics by He-implant-induced Cavities in Si Diode

作　　者：唐有青[1] 李恒[1] 游志朴[1] 张坤[2] 李仁豪[2] 李作金[2] 

机构地区：[1]四川大学物理系,四川成都610064 [2]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2003年第2期131-134,共4页Semiconductor Optoelectronics

摘　　要：　高剂量的氦离子注入并热处理在硅中形成对金属具有高吸杂作用的微孔。以低金属杂质浓度的硅平面二极管的反向漏电流为指标,研究了吸除的热处理过程对微孔吸杂效果的影响。在适当的热处理温度和冷却条件下,观测到二极管反向漏电流的显著改善,部分样品漏电流可降低3个数量级。Cavities, formed in silicon by high dose helium implantation and subsequent heat treatment, have a great effect on gettering metallic impurities. Using the leakage current of silicon planar diode with low concentration of metallic contamination as index, we investigated the influence of heat treatment on gettering efficiency of the cavity. Under the proper conditions of temperature of heat treatment and cooling, we found that the leakage current of the diode decreases remarkably, which would reduce by three orders of magnitude for some of the samples.

关 键 词：氦诱生微孔 二极管 热处理 漏电流 微孔吸杂技术 

分 类 号：TN311[电子电信—物理电子学]