薄膜厚度对ZnO:Al透明导电膜的结构和光电性能的影响  

Thickness Dependence of Structural,Optical and Electrical Properties for ZnO:Al Transparent Conducting Films

作　　者：杨田林[1] 杨光德[1] 

机构地区：[1]山东理工大学,山东淄博255091

出　　处：《淄博学院学报（自然科学与工程版）》2002年第2期32-35,共4页Journal of Zibo University(Natural Sciences and Engineering)

摘　　要：采用射频磁控溅射法在有机薄膜衬底和 70 5 9玻璃衬底上在室温下制备出了因淀积时间变化而厚度不同的ZnO :Al透明导电膜 ,并对不同厚度薄膜的结构特性、表面形貌和光电特性进行了比较研究 .铝掺杂的氧化锌薄膜是多晶膜具有六角纤锌矿结构 ,最佳取向为 (0 0 2 )方向 .淀积时间为 3 0分钟的薄膜具有最低的电阻率 ,分别为 2 .5 5× 1 0 3Ω·cm和 1 .89× 1 0 3Ω·cm ,在可见光区的平均透过率分别达到了 80 %和 85 %以上 .Aluminium-doped Zinc oxide(AZO)films with different thickness have been prepared on organic substrates and 7095 glass substrates by r.f.magnetron-sputtering technique at different deposited time.Structural and photoelectrical properties and the surface morphologies of different thick films are compared.The films are polycrystalline with shxagonal structure and a preferred orientation is(002)peak.When deposited time is 30 min,the films with resistency as low as 2.55×10 -3 Ω·cm and 1.89×10 -3 Ω·cm respectively deposited on PPA substrates and glass substrates,the average transmitance over 80% and 85% in the wavelength range of the visible spectrum has been obtained on different substrates.

关 键 词：薄膜厚度 ZnO:A1透明导电膜 性能比较 薄膜 光电特性 铝掺杂 氧化锌薄膜 

分 类 号：TN304.055[电子电信—物理电子学] O4[理学—物理]