热壁外延生长GaAs薄膜的结构特征  

STRUCTURAL CHARACTERISTICS OF GaAs FILM PERPARED BY HOT WALL EPITAXY

作　　者：涂洁磊[1,2] 林理彬[1] 陈庭金[3] 章晨静[3] 吴长树[3] 施光顺[3] 

机构地区：[1]四川大学物理系国家教育部"辐射物理及技术"重点实验室 [2]云南师范大学太阳能研究所,昆明650092 [3]云南师范大学太阳能研究所

出　　处：《太阳能学报》2003年第1期14-17,共4页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金项目 ( 5 99660 0 2 )

摘　　要：该文介绍以Si和SnO2 / glass两种材料为衬底 ,采用热壁外延方法 ,制得GaAs多晶薄膜。采用电子探针 (EPMA)测定薄膜的组分、表面与剖面形貌 ,x射线衍射 (XRD)分析薄膜的结构情况。结果表明该薄膜表面呈绒面结构、其晶粒为柱状结构 ,初步证明这种GaAs多晶薄膜有希望成为新一代廉价、高效太阳电池的候选材料。GaAs polycrystalline thin films were prepared by hot wall epitaxy (HWE), which possessed good structure and were suitable for solar cells. Electron probe micro analyzer (EPMA) was applied for the composition, morphology and cross ection of grown films. X ray diffraction (XRD) showed GaAs polycrystalline films with textured surface and columnar. The materials are greatly promising of the candidate of solar cells with low cost and high efficiency.

关 键 词：太阳电池 GaAs薄膜 Si或SnO2/glass衬底 

分 类 号：TK51[动力工程及工程热物理—热能工程]