Al_2O_3陶瓷衬底碳离子预注入对金刚石薄膜应力的影响研究  

Study of the stress observed in diamond films on carbon-implanted alumina surfaces

作　　者：方志军[1] 夏义本[1] 王林军[1] 张伟丽[1] 马哲国[1] 张明龙[1] 

机构地区：[1]上海大学材料科学与工程学院,上海201800

出　　处：《物理学报》2003年第4期1028-1033,共6页Acta Physica Sinica

基　　金：上海应用材料研究与发展基金 (批准号 :0 0 0 6)资助的课题~~

摘　　要：通过对Al2 O3陶瓷衬底进行碳离子预注入 ,大大降低了Al2 O3陶瓷衬底上金刚石薄膜的应力 ,且金刚石薄膜中的压应力随碳离子注入剂量的增加而线性下降 .通过对Al2 O3陶瓷衬底注入前后的对比分析表明 ,高能量的碳离子注入Al2 O3陶瓷衬底以后 ,并没有产生过渡层性质的新相 ,而是大量累积在Al2 O3晶格的间隙位 ,使Al2 O3晶格发生畸变 .而且 ,随着碳离子注入剂量的增加 ,Al2 O3基体内晶格畸变加剧 ,注入层残余压应力也随之上升 .当金刚石薄膜沉积以后 ,在降温的过程中衬底这部分残余应力得到释放 。The compressive stress in the diamond films formed on alumina ceramics can be reduced by implantation of carbon ions into alumina substrates before the deposition of diamond films. After carbon ion implantation, there is no new phase identified as interlayer by comparing the x-ray diffraction (XRD) patterns of the un-implanted and implanted substrates. In addition, the stress in the diamond films decreases linearly with the increase of the C+ implantation dose. This is because the implanted ions settle in the interstitial position and induce the residual compressive stress in the alumina lattice. This compressive stress, when the diamond films deposited and cooled down to room temperature, will be released and partly offset the compressive stress in the diamond films.

关 键 词：金刚石薄膜 应力 Al2O3陶瓷衬底 三氧化二铝陶瓷 离子注入 集成电路 基片 

分 类 号：TN304.05[电子电信—物理电子学]