多孔硅的不同制备方法及其光致发光  

Fabrication Method and Photoluminescence of Porous Silicon

作　　者：王晓静[1] 李清山[1] 王佐臣[1] 

机构地区：[1]曲阜师范大学物理系,山东曲阜273165

出　　处：《发光学报》2003年第2期203-207,共5页Chinese Journal of Luminescence

摘　　要：目前,多孔硅的制备方法已有许多种。我们用电化学方法、光化学方法和化学方法分别制备出了室温下在可见光区发射光荧光的多孔硅。通过对实验装置、制备条件、样品的成膜过程及其光致发光(PL)光谱的比较,分析解释了其成膜机理和PL光谱的特点。认为虽然这三种方法都可以制备出多孔硅,但相比较而言,通过电化学方法制备的样品最均匀,实验的可重复性较强,因而电化学方法是被普遍采用的一种方法。另外在多孔硅的成膜过程中,自由载流子起着至关重要的作用。At present, porous silicon(PS) can be prepared by different methods.Por ous silicon fabricated by anodic etching, photochemical etching and chemical etc hing were reported respectively,but the difference of the three methods has not yet been reported.The substrates used in this work were all ntype Si wafer with resistiv ity betwe en 4～7Ω·cm and (100) crystalline orientation.The first sample was prepared by ano dic etching method in doublecell which made of teflon.The anodic etching was ca rried out in a solution of HF∶ethanol=1∶1 at constant current density o f 3mA/c m2 at room temperature.The second sample was prepared by photochemical etching me thod using a 632.8nm line from a HeNe laser of 1.5mW in the solution of the sa m e as the first. The third sample was prepared by chemical etching method in a so lution of V(HF)∶V(HNO3)∶V(H2O)=1∶1∶15 without current or light assistant. Formation mech anism of PS was analyzed and photoluminescence(PL) spectra of the three samples was investigated in this paper.Anodic oxidation method is the best one verified by comparing experimental setup ,preparing conditions,formation mechanism and photoluminescence spectra.In add tion,free carriers play an important role in the formation process of porous s ilicon.

关 键 词：多孔硅 制备方法 光致发光 电化学方法 光化学方法 光致发光谱 

分 类 号：TN304.12[电子电信—物理电子学] O472.3[理学—半导体物理]