高温热处理和不同基体炭对C/C多孔体熔融渗硅行为的影响  

Influence of High-temperature Processing and Different Carbon Matrixes on Behaviour of Infiltration of Molten Silicon into Porous C/C P reforms

作　　者：王林山[1] 熊翔[1] 肖鹏[1] 

机构地区：[1]中南大学粉末冶金国家重点实验室,湖南长沙410083

出　　处：《矿冶工程》2003年第2期77-79,83,共4页Mining and Metallurgical Engineering

基　　金：教育部科学技术研究重点项目 ( 0 2 14 8)

摘　　要：以针刺整体毡为坯体 ,采用化学气相沉积 (CVD)和树脂浸渍 /炭化方法 (IC)制成C/C多孔体 ,然后熔融渗硅 (MSI)制备了C/C SiC复合材料 ,研究了高温热处理 (HTP)和不同基体炭对多孔体熔融渗硅行为的影响 ,并探讨了高温热处理树脂炭对SiC生成量的影响。研究表明 :利用CVD→IC混合工艺制备的C/C多孔体 ,渗硅前高温热处理较炭化的更有利于液硅的渗入 ;高温热处理使得树脂炭的孔比表面积增加 ,从而反应生成SiC也多 ;与热解炭或最后热解炭增密的C/C多孔体相比 。Porous C/C preform is prepared by chemical vapor deposition(CVD) a nd resin impregnation/carbonization(IC), and then molten silicon is infiltrated into it, producing a C/C-SiC composite. The effect of high temperature processi ng(HTP) and different carbon matrixes on infiltration behaviour of molten silic on into the porous C/C preform is investigated and the effect of HTP on the quan tity of SiC forming by reaction is discussed. The results have shown that HTP pr ior to silicon infiltration is more beneficial to infiltration of liquid silico n into the porous C/C preform which is prepared by combined use of CVD and IC th an carbonization. This is due to the fact that HTP can enlarge the specific sur face area of resin carbon's pores, leading to formation of more SiC. The porous C/C preform which is densified with or finally with resion carbon is more benef icial to infiltration of liquid silicon than the porous C/C preform which is densified wi th or finally with pyrolytic carbon.

关 键 词：高温热处理 树脂浸渍 C/C多孔体 熔融渗硅 CVD 复合材料 

分 类 号：TB332[一般工业技术—材料科学与工程]