Zr掺杂的SnO_2瓷的压敏和介电性质  

Voltage-sensitive and Dielectric Properties of Zr-doped SnO_2 Ceramics

作　　者：王矜奉[1] 陈洪存[1] 王文新[1] 苏文斌[1] 臧国忠[1] 亓鹏[1] 王春明[1] 赵春华[2] 

机构地区：[1]山东大学物理与微电子学院 [2]滨州师专物理系,山东滨州256604

出　　处：《电子元件与材料》2003年第4期8-10,共3页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(50072013)

摘　　要：目前电子陶瓷工艺普遍采用ZrO2球作为磨介。为了弄清ZrO2球磨损对压敏瓷性能的作用,系统研究了ZrO2对(Co,Nb)掺杂SnO2瓷的压敏和介电性质的影响。当ZrO2的含量(摩尔分数)从0.00增加到1.00%时,(Co,Nb)掺杂的SnO2压敏电阻的击穿电压从345 V/mm增大到485 V/mm,1 kHz时的相对介电常数从1 590减小到1 120。晶界势垒高度测量表明:在实验范围内,Zr的含量对势垒高度的影响较小。SnO2的晶粒尺寸的迅速减小是击穿电压增高和介电常数迅速减小的主要原因。对Zr掺杂量增加引起SnO2晶粒减小的根源进行了解释。ZrO2 balls are now widely used as a grinding medium in the electronic ceramics process. To clarify the influence of wear and tear of ZrO2 balls on varistor ceramics, the effect of ZrO2 dopant on the voltage-sensitive and dielectric properties of the SnO2 ceramics was investigated. The breakdown voltage of the Co/Nb doped SnO2 based varistors increases from 345 V/mm to 485 V/mm, and the relative dielectric constant at 1kHz decreases from 1 590 to 1 120 when ZrO2 concentration increases from 0.00 to 1.00 mol%. Measured barrier height at grain boundaries shows that the ZrO2 concentration in this experimental range has less influence on barrier height. The cause for increase of breakdown voltage and decrease of dielectric constant is the rapid decrease of the SnO2 grain when ZrO2 concentration from 0.00 to 1.00 mol%. The mechanism of the decrease of SnO2 grain size with the increase of ZrO2 concentration is discussed.

关 键 词：二氧化锆 二氧化锡 势垒 电学非线性 

分 类 号：TN379[电子电信—物理电子学]