提高发光二极管(LED)外量子效率的途径  

Enhancement of the External Quantum Efficiency of Light-emitting-diodes

作　　者：齐云[1] 戴英[2] 李安意[2] 

机构地区：[1]山东大学晶体材料国家重点实验室,山东济南250100 [2]山东大学物理与微电子学院,山东济南250100

出　　处：《电子元件与材料》2003年第4期43-45,共3页Electronic Components And Materials

摘　　要：发光二极管的内量子效率与外量子效率之间存在巨大的差距,主要介绍了提高发光二极管(LED)外量子效率的几种途径,包括生长分布布喇格反射层(DBR)技术,将射向衬底的光反射回表面;制作透明衬底(TS)取代原有的GaAs衬底;改变LED几何外形来缩短光在LED内部反射的路程以及限制全反射现象的表面粗化技术。对比了每种方法的发展过程及效率。Of Light-emitting diodes (LED), the internal efficiency is quite different from the external efficiency. Several approaches to enhance the external quantum efficiency of LED are discussed and compared. With Distributed Bragg Reflector (DBR) technology, light on the substrates will be reflected back to surfaces. Transparent substrates can be used to take place of GaAs substrates. Reflection distance in the LED can be shortened by changing the geometry of LED. Surface Texture Technology can be used to limit total reflection.

关 键 词：分布布喇格反射层结构 透明衬底 倒金字塔形LED 表面粗化技术 

分 类 号：TN304[电子电信—物理电子学]