双极型三极管饱和状态的探讨  

A Research on the Saturational State of Bipolar Junction Transistor

作　　者：张大平[1] 

机构地区：[1]钦州师范高等专科学校物理与电子工程系,广西钦州535000

出　　处：《广西师范学院学报（自然科学版）》2002年第1期65-68,共4页Journal of Guangxi Teachers Education University(Natural Science Edition)

摘　　要：建立三极管的物理模型 ,分析讨论了三极管饱和时的偏置状态和载流子的运动规律 。Based on the newly-built physical models of the transistor,the paper attempts to analyse the bias state within saturation and carriers' motional principles of the bipolar transistor,and meanwhile explains advancedly the correctness of the forward bias of the transistor-collector junction on the state.

关 键 词：双极型三极管 饱和状态 物理模型 偏置状态 载流子 集电结 NPN型三极管 正偏 

分 类 号：TN322.8[电子电信—物理电子学]