Ge_xSi_(1-x)/Si应变层超晶格光伏特性研究  

INVESTIGATION ON PHOTOVOLTAIC CHARACTERISTICS OF Ge_xSi_(1-x)/Si STRAINED-LAYER SUPERLATTICES

作　　者：朱文章[1] 刘士毅[1] 

机构地区：[1]厦门大学物理系,福建厦门361005

出　　处：《红外与毫米波学报》1992年第2期134-138,共5页Journal of Infrared and Millimeter Waves

基　　金：复旦大学应用表面物理国家实验室资助

摘　　要：采用电容耦合法测量了Ge_xSi_(1-x)/Si应变层超晶格在不同温度下的光伏特性.在Ⅱ型能带排列的样品中观测到价带-导带子带和价带子带-导带光跃迁的4个峰.对所有样品测得的光伏截止波长都比理论预期值小.还对光电压随温度的变化作了初步解释.The photovoltaic characteristics of Ge_xSi_(1-x)/Si strained-layer superlattices atdifferent temperatures have been measured by the capacitor coupling method. Four peakscorresponding to optical transitions from the valence band to electron subbands and fromhole subbands to the conduction band have been observed in the samples with type-Ⅱband alignments. The cut-off wavelengths of photovoltaic measurements are shorter thanthose of theoretical calculations for all the samples. The variation of photovoltage withtemperature has been explained preliminarily in the paper.

关 键 词：光伏效应 半导体 应变层超晶格 

分 类 号：TN304.23[电子电信—物理电子学]