纳米TiO_2薄膜的结构与光电特性  

Characteristics on Structure and Photoelectricity of Nanometer TiO_2 Thin Films

作　　者：顾广瑞[1] 李英爱[1] 陶艳春[2] 何志[1] 殷红[1] 李卫青[1] 赵永年[1] 

机构地区：[1]吉林大学超硬材料国家重点实验室 [2]吉林大学超分子结构和谱学开放实验室,长春130023

出　　处：《光散射学报》2003年第1期38-41,共4页The Journal of Light Scattering

摘　　要：用射频磁控溅射方法制备出厚度大约15-225nm的TiO2薄膜。Raman光谱测量显示,TiO2薄膜主要是金红石结构(含少量板钛矿相)。紫外可见光吸收光谱表明,在纳米厚度(100nm)范围内,TiO2薄膜的带隙宽度随着薄膜厚度的变化而变化。室温下测量TiO2薄膜的电阻率发现,随着厚度的增加TiO2薄膜的电阻率先后在导体、半导体和绝缘体范围变化。The nanometer TiO2 thin films with the thickness from 15 nm to 225 nm were deposited by reactive magnetron sputtering. Raman spectra showed that the structure of rutile including a spot of brookite were obtained. UVVis absorption spectra indicated that the energe width of TiO2 thin films changes with the thickness in the nanometer thickness range. It was found that the resisitivity of TiO2 thin films varied in the range from conductor, semiconductor to nonconductor in room temperature.

关 键 词：纳米Ti02薄膜 射频磁控溅射 二氧化钛薄膜 结构 光电特性 光谱分析 导电性 电阻率 

分 类 号：O484.1[理学—固体物理] O484.4[理学—物理]