用光伏法及红外吸收法分析硅单晶质量  

Quality Analysis of Silicon Monocrystal by IR Absorption Method and Photovoltaic Method

作　　者：吴建国[1] 刘士毅[2] 

机构地区：[1]华侨大学 [2]厦门大学

出　　处：《华侨大学学报（自然科学版）》1992年第3期336-342,共7页Journal of Huaqiao University(Natural Science)

摘　　要：本文用光伏法测定样品的少子扩散长度,论证放宽直线拟合的T.S.Moss条件,用红外吸收法测定样品的氧、碳含量并样品的品质,实验发现,硅单晶的红外吸收光谱(a-λ^(-1))的基线愈高,则其中的少子扩散长度愈短;反之亦然,还探讨了基线的物理性质。For analysing the quality of silicon monocrystal, the minor diffusion length of the sample is determined by photovoltaic method and the T. S. Moss condition for widening the linear-fitting is deminstrated; oxygen and carbon contents of the sample are determined by infrared absorption method and the quality of the sample is analysed. It is found experimentally that the higher the baseline of 1R absorption specrrum (α-λ^(-1))of the silicon monocrystal, the shorter the minor diffusion length in it; and vice versa. The physical mature of the baseline is discussed.

关 键 词：硅单晶 光伏 红外吸收 氧 含量 碳 

分 类 号：TN304.12[电子电信—物理电子学]