光电双基区晶体管(PDUBAT)的器件模型  

A Device Model of Photoelectric Dual Base Transistor

作　　者：张生才[1] 郑云光[1] 郭辉[1] 李树荣[1] 张世林[1] 郭维廉[1] 胡泽军[1] 夏克军[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《电子学报》2003年第5期790-792,共3页Acta Electronica Sinica

基　　金：天津市自然科学基金资助项目 (No.98360 1 4 1 1 )

摘　　要：本文在考虑了晶体管的小注入效应和大注入效应以及基区宽变效应等因素后 ,首次用近似和简化的数学表示式和相应的等效电路 ,描述了光电双基区晶体管 (PDUBAT)By adopting the approximate and simplified mathematical expressions and the relative equivalent circuit for the first time in consideration of the low injection effect,the high injection effect and the early effect etc.of the transistor,the mechanism for the origin of the negative resistance in photoelectric dual base transistor (PDUBAT) has been described.The theoretical calculation is well consistent with experimental results in the negative resistance region and the valley region.

关 键 词：光电双基区晶体管 反馈电流 瞬态电流 

分 类 号：TN405[电子电信—微电子学与固体电子学]