多晶Hg_(1-x)Cd_xTe薄膜电极 多硫氧化还原电对溶液的界面现象研究  

Studies on Interfacial Phenomena of Polycrystalline Hg_(1-x)CdxTe Thin Film Electrode Polysulfide Redox Solution

作　　者：李军[1] 谭正[1] 糜天英[1] 孙公权[1] 

机构地区：[1]中国科学院长春应用化学研究所

出　　处：《化学学报》1992年第8期752-755,共4页Acta Chimica Sinica

基　　金：国家自然科学基金资助的项目

摘　　要：测量了系列(1-x)值的电沉积多晶Hg_(1-x)Cd_xTe薄膜电极在多硫氧化还原电对溶液中的交流阻抗和光电流光谱,据此确定出不同(1-x)值时的平带电位Φ(?)和禁带宽度E(?).当(1-x)值增大时,平带电位正移,禁带宽度E(?)变小,导带位置下降(负移),价带位置基本保持不变.系列Hg_(1-x)Cd_xTe薄膜电极在多硫溶液中的开路光电压比由平带电位Φ_(fb)推算出的极限开路光电压低,因此存在着提高实际开路光电压的潜力.Electrode capacitance and photocurrent spectra of electrodeposited polycrystalline Hg_(1-a)Cd_xTe thin films of varying (1-x) were measured in polysulfide redox solution, hence the flatband potentional Φ_(rb) and the bandgap E_g of Hg_(1-x)Cd_xTe thin films obtained. It was of interest to find out that only the location of conduction band E_c shifts negatively with increasing (1-x) while the valence band E_v is almost constant. The experimental open circuit photovoltage V_o is smaller than theoretical Value V_(max) calculated through flatband potential Φ_(fb), therefore there is a possibility of promoting the experimental open circuit photovoltage.

关 键 词：汞镉碲 界面科学 光电化学 

分 类 号：O614.243[理学—无机化学]