PIN二极管的PSPICE子电路模型  

A New PSPICE Subcircuit Model of Power PIN Diode

作　　者：施浩[1] 陆鸣[1] 

机构地区：[1]上海交通大学微纳米科学技术研究院,上海200030

出　　处：《电力电子技术》2003年第3期91-94,共4页Power Electronics

摘　　要：提出了一种PIN二极管的PSPICE子电路模型。该模型同时考虑了二极管的反向恢复、端区复合以及空间电荷区边界移动效应。能更精确地模拟PIN二极管的开关特性。A new PSPICE subcircuit model of power PIN diode is developed. The model takes into consideration of reverse recovery, emitter recombination and moveable bound effect. The model can accurately simulate switching behavior of PIN diode.

关 键 词：二极管 模型 仿真/于电路 PIN二极管 

分 类 号：TN312[电子电信—物理电子学]