反应溅射TiC薄膜的微结构及力学性能  被引量:3

Microstructure and Mechanical Property of TiC Thin Films Via Reative Magnetron Sputtering

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作  者:邵楠[1] 梅芳华[1] 董云杉[1] 李戈扬[1] 

机构地区:[1]上海交通大学金属基复合材料国家重点实验室,上海200030

出  处:《表面技术》2003年第3期10-12,共3页Surface Technology

摘  要:采用反应磁控溅射法在不同的甲烷分压下制备了一系列的TiC薄膜 ,利用XRD和TEM表征了薄膜的相组成和微结构 ,用力学探针测量了薄膜的硬度和弹性模量 ,并利用AFM观察了薄膜的生长形貌和压痕形貌 ,研究了甲烷分压对薄膜相组成、微结构和力学性能的影响。结果表明 ,甲烷分压对薄膜的相组成、微结构和力学性能均有明显的影响 :低的甲烷分压下 ,制备的薄膜样品中有钛相的存在 ,薄膜的硬度和弹性模量较低 ;甲烷分压提高 0 .0 2~0 .0 4Pa左右 ,薄膜内形成晶粒细小的单相TiC ,并获得最高的硬度 ( 3 0 .9GPa)和弹性模量 ( 3 43GPa) ;进一步提高甲烷分压 ,薄膜呈现非晶态 。Ti C thin films are deposited by reactive magnetron sputtering method at different CH4 partial pressure. XRD, TEM and AFM are employed to characterize their phases, microstructures and surface morphology. Microhardness and elastic modulus are also evaluated by using a nanoindenter. The effect of CH4 partial pressure on the phases, microstructures and mechanical properties of TiC thin films is investigated. The results show that the partial pressure of CH4 has an obvious effect on the phases, microstructures,microhardness and elastic modulus of the thin films: in a low CH4 partial pressure, the thin films have a rather low hardness with the XRD indicating the existence of Ti; when CH4 partial pressure increases from 0.02Pa to 0.04Pa, there is the formation of fcc-TiC in the film which has the maximal hardness of 30.9GPa and elastic modulus of 343GPa. Continuing the heightening of CH4 partial pressure, the hardness and elastic modulus of thin films drop with the formation of amorphous state.

关 键 词:TiC薄膜 反应磁控贱射 微结构 力学性能 

分 类 号:O484[理学—固体物理]

 

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