基于多孔硅的共平面波导制备及传输特性研究  

Fabrication of a Coplanar Waveguide Based on Porous Silicon and Investigation into Its Transmission Characteristics

作　　者：游淑珍[1] 石艳玲[1] 忻佩胜[1] 朱自强[1] 赖宗声[1] 

机构地区：[1]华东师范大学电子科学技术系,上海200062

出　　处：《微电子学》2003年第3期203-206,共4页Microelectronics

基　　金：国家973项目<集成微光机电系统研究>(G19990303105);国家自然科学基金项目(69876012);国家杰出青年基金项目(69975409);上海市应用材料研究与发展基金项目(0103);上海市重点学科项目(012261028);上海市重点学科项目(2001年)资助。

摘　　要：　多孔硅被认为是RF应用领域中较有潜力的衬底材料。文章利用多孔硅作衬底,制备了微型微波共平面波导,采用多线方法计算出该波导在多孔硅上的插入损耗和有效介电常数;提出了通过多孔硅的相对介电常数来确定多孔度的方法。实验测试结果表明,在20μm多孔硅上的波导,其插入损耗在1～30GHz范围内为1～40dB/cm;而在70μm多孔硅上制备的波导,其插入损耗在整个测试频段内不超过7dB/cm。通过有效介电常数的计算,推算出实验制备的70μm多孔硅材料的多孔度约为65%。Miniature micromave coplanar waveguides were fabricated on porous silicon substrate The insert loss and the effective dielectric constant of these waveguides were calculated with multiline method And a method to determine the porosity through the relative dielectric constant of the porous silicon is presented in the paper It has been found that the insert loss of the waveguide on 20 μm porous silicon was between 1 and 40 dB/cm from 1 GHz to 30 GHz, while, for the waveguide on 70 μm porous silicon, the insert loss was below 7 dB/cm in the full measured frequency range And the porosity of 70 μm porous silicon in our experiment was about 65%, which was deduced from the relative dielectric constant of porous silicon

关 键 词：多孔硅 共平面波导 传输特性 阳极氧化 插入损耗 有效介电常数 

分 类 号：TN304.12[电子电信—物理电子学] TN814