一种高精密CMOS带隙基准源  

A High Precision CMOS Bandgap Voltage Reference Circuit

作　　者：王彦[1] 韩益锋[1] 李联[1] 郑增钰[1] 

机构地区：[1]复旦大学专用集成电路与系统国家重点实验室,上海200433

出　　处：《微电子学》2003年第3期255-258,261,共5页Microelectronics

摘　　要：　设计了一个与n阱工艺兼容的高精密CMOS带隙基准电压源电路。该电路实现了一阶PTAT温度补偿,并具有好的电源抑制比。SPICE模拟和测试结果表明,其电源抑制比可达到60dB,在20～70°C范围内精度可达到60ppm/°C。A high precision bandgap voltage reference circuit is presented in the paper, which is compatible with nwell CMOS technology The circuit fulfills the firstorder PTAT (Proportion To Absolute Temperature) temperature curvature compensation Results from HSPICE simulation and chip test show that the circuit has a power supply rejection ratio (PSRR) of 60 dB and an accuracy of 60 ppm/°C in the temperature range from 20 °C to 70 °C

关 键 词：带隙基准源 电源抑制比 温度系数 CMOS 温度补偿 集成电路 基准电压源 运放电路 启动电路 版图设计 

分 类 号：TN432[电子电信—微电子学与固体电子学]