空间电子辐照下半导体器件的抗辐射屏蔽优化  

Optimization of Anti-Radiation Shield on Semiconductor Device under Electron Radiation in Space

作　　者：徐加强[1] 王传珊[2] 

机构地区：[1]上海大学理学院,上海200436 [2]上海大学射线应用研究所,上海201800

出　　处：《上海大学学报（自然科学版）》2003年第3期259-262,共4页Journal of Shanghai University:Natural Science Edition

摘　　要：该文探讨了在地球同步轨道辐照环境下对半导体器件的抗辐射屏蔽问题.针对我国空间飞行器中对半导体器件较常用的局部屏蔽加固的方法,在M-C计算机模拟的基础上对屏蔽层材料及其厚度进行了优化设计.This paper deals with the problem of shielding against electron radiation from the radiation environment of geospace. Based on the MonteCarlo simulation, optimization of shielding layer material and their thicknesses were obtained for implementing partial shielding of semiconductor devices in space vehicles.

关 键 词：抗辐射屏蔽 能量沉积 半导体器件 Monte—Carlo 

分 类 号：O571.33[理学—粒子物理与原子核物理]