智能剥离技术制备单晶SOG材料的研究  

Fabrication of monocrystalline silicon on glass by smart-cut

作　　者：宋华清[1] 石兢[2] 张苗[1] 林成鲁[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050 [2]武汉大学物理系,武汉430072

出　　处：《功能材料与器件学报》2003年第2期219-221,共3页Journal of Functional Materials and Devices

基　　金：国家自然科学基金资助项目(No.90101012)

摘　　要：结合中等剂量的氢离子注入和阳极键合(Anodicbonding),利用智能剥离技术(Smart-cut)成功转移了一层单晶硅到玻璃衬底上。采用剖面透射电镜、高分辨透射电镜、扫描电镜和拉曼光谱等对SOG材料进行了研究,结果表明此技术制备的SOG材料具有界面陡峭、平整,顶层硅单晶质量完好等优点。Monocrystalline Silicon films were transferred to a glass substrate by Smart-cut technique which based on H+ions implantation, anodic bonding and layer splitting. The SOG structures were characterized by cross-section transmission electron microscopy (XTEM), HRTEM,Scanning electron microscopy (SEM) and Raman Spectroscopy. The results show that SOG materials fabricated by Smart- cut has advantages of steep top Si/glass interface and good monocrystalline Si quality.

关 键 词：单晶硅 SOG材料 阳极键合 智能剥离 落层转移 

分 类 号：TN304.12[电子电信—物理电子学]