Ⅲ-Ⅴ族超晶格量子阱结构红外探测器最新进展  

New Development of the Ⅲ-Ⅴ Superlattice and Quantum Well Structures Infrared Detectors

作　　者：汪艺桦 

机构地区：[1]中科院上海技术物理所,上海200083

出　　处：《激光与红外》1992年第5期18-24,12,共8页Laser & Infrared

摘　　要：半导体超晶格量子阱作为新一代微电子器件材料而迅速堀起,亦为寻求品质优异、具有特殊性能的红外探测器材料开拓了一个全新的能带工程领域。本文综述了国外发展很快的Ⅲ-Ⅴ族超晶格量子阱红外器件,着重介绍近两年的新成果。At present, the semiconductor superlattice and quantum well structures as a new type of photoelectric material are rapidly rising and opening with a new band-gap engineering for the various infrared detectors This paper reviews the development of the Ⅲ-Ⅴ superlattice and quantum well infrared detectors, and attaches the importance to the latest achievements.

关 键 词：红外探测器 超晶格半导体 量子阱 

分 类 号：TN215[电子电信—物理电子学]