纳米结构Ag-TCNQ电双稳薄膜的制备及分析  

Preparation and Analysis of Electrical Bistable Ag-TCNQ Nanograin Films

作　　者：王伟军[1] 张群[1] 吉小松[1] 严学俭[1] 章壮健[1] 华中一[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《真空电子技术》2003年第2期37-40,共4页Vacuum Electronics

摘　　要：采用真空蒸发和大气环境下后热处理的方法制备了纳米量级颗粒均匀的Ag TCNQ薄膜。通过可见光范围透射谱、X射线衍射、原子力显微镜、傅里叶红外光谱以及X光电子谱等分析研究了薄膜的物理和化学性质 ,发现热处理可促使Ag和TCNQ发生充分的络合反应并减小薄膜的颗粒度 ,在此基础上利用STM实现了局域电双稳态的转变和纳米存储点的写入。Electrical bistable Ag-TCNQ thin films with uniform grains in nanometer scale were prepared by vacuum evaporation and post-annealing in atmosphere. Physical and chemical properties of the films were evaluated and investigated by a variety means of visible light transmission spectra, XRD, AFM images, FT-IR and XPS. It was found that post-annealing not only makes complexation reaction occurred between Ag and TCNQ but also reduces the grain size. Furthermore, the transition of electrical bistable in a local region and recording dots of nanometer scale have been realized by STM.

关 键 词：AG-TCNQ 电双稳特性 纳米颗粒薄膜 热处理 

分 类 号：O484.1[理学—固体物理]