溅射氩分压对ITO透明导电薄膜光电特性的影响  

Effects of Sputtering Argon Partial Pressure on Photoelectric Properties of Transparent Conducting ITO Films Deposited on Flexible Substrate

作　　者：杨田林[1] 韩圣浩[2] 高绪团[1] 

机构地区：[1]山东理工大学物理系,淄博255049 [2]山东大学物理与微电子学院,济南250100

出　　处：《光电子技术》2003年第2期78-82,共5页Optoelectronic Technology

基　　金：国家自然科学基金资助项目 ( No.60 1 760 2 1 )

摘　　要：用磁控溅射法在水冷 PPA聚脂胶片上制备了性能优良的 ITO透明导电膜。本文重点讨论了溅射氩分压对薄膜的结构和光电特性的影响 ,合适的氩分压为 0 .5 Pa,在此条件下 ,制备的薄膜最小电阻率为 4.6× 1 0 -4Ω· cm,相应的自由载流子霍耳迁移率有最大值为 75 cm2 /( V· s) ,在可见光范围内相对透过率为 80 %左右 ,在红外区 ,薄膜的等离子共振吸收波长随着氩分压的减小而变短。X射线衍射表明薄膜为多晶纤锌矿结构 ,垂直于衬底的 C轴具有 [2 2 2 ]方向的择优取向 ,随氩分压的增大 ,[40 0 ]峰开始增强 ,[2 2 2 ]峰被削弱 ,薄膜呈现出混晶结构。 XPS谱分析表明随溅射分压的减小 ,薄膜中的氧空位浓度增大 。High quality ITO (10% SnO 2 impurity w.t.) films were deposited on water cooled PPA (Polypropylene adipate) substrate by r.f.magnetron sputtering. This paper has discussed the structure and photoelectric properites of films dependence of sputtering argon partial pressure. Appropriate argon partial pressure is 0.5 Pa in this condition, the resistivity of the films is as low as 4.6×10 -4 Ω·cm and Hall mobility is 75 cm 2/(V·s). In visible range, the transmittance of the films is about 80% , in infrared range plasma resonance absorption wavelength is shorter with argon partial pressure decreased. XRD patterns indicate the X ray diffraction peaks of increase and peaks of decrease with argon partial pressure decreasing, which means the amount of crystal grain growing along increases. XPS spectra indicate that the density of the oxygen vacancies increases with the argon partial pressure decreased.

关 键 词：磁控溅射 ITO透明导电薄膜 光电特性 氩分压 等离子体共振吸收 

分 类 号：TN304.055[电子电信—物理电子学]