关于溅射条件对RF溅射Al_2O_3膜应力的影响的研究  

The Study of Effects of Sputtering Conditions on the Stress of RF-Sputtered Alumina Films

作　　者：宋庆山[1] 

机构地区：[1]中国科学院计算技术研究所,北京100080

出　　处：《计算机研究与发展》1992年第7期50-55,共6页Journal of Computer Research and Development

摘　　要：本文简述了淀积于基片上的薄膜中的应力的计算理论的演变过程.评价了每种计算公式的优缺点.这些方法统称为"弯梁法".详细报导了溅射条件对溅射Al_2O_3膜应力的影响的实验结果.In this paper, The developmental process of the calculating theory of the stress in thin films on the same substrate is described briefly. And the advantages and disadvantages for every calculating formula are also evaluated. These methods are referred to as 'bending beam method'. The experimental results of effects of RF-sputtering conditions on the stress of sputtered alumina films are reported in detail.

关 键 词：溅射 Al2O3膜 

分 类 号：TN304.21[电子电信—物理电子学]