A Method to Separate Effects of Oxide-Trapped Charge and Interface-Trapped Charge on Threshold Voltage in pMOSFETs Under Hot-Carrier Stress  

一种用于分离pMOS器件热载流子应力下氧化层陷阱电荷和界面陷阱电荷对阈值电压退化作用的方法(英文)

作　　者：杨国勇[1] 王金延[1] 霍宗亮[1] 毛凌锋[1] 谭长华[1] 许铭真[1] 

机构地区：[1]北京大学微电子学研究所,北京100871

出　　处：《Journal of Semiconductors》2003年第7期673-679,共7页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目 (No.2 0 0 0 -0 3 65 0 3 )~~

摘　　要：A simple new method based on the measurement of charge pumping technique is proposed to separate and quantify experimentally the effects of oxide-trapped charges and interface-trapped charges on threshold voltage degradation in p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) under hot-carrier stress.Further,the experimental results verify the validness of this method.It is shown that,all three mechanisms of electron trapping effect,hole trapping effect and interface trap generation play important roles in p-channel MOSFETs degradation.It is noted that interface-trapped charge is still the dominant mechanism for hot-carrier-induced degradation in p-channel MOSFETs,while a significant contribution of oxide-trapped charge to threshold voltage is demonstrated and quantified.在电荷泵技术的基础上 ,提出了一种新的方法用于分离和确定氧化层陷阱电荷和界面陷阱电荷对 p MOS器件热载流子应力下的阈值电压退化的作用 ,并且这种方法得到了实验的验证 .结果表明对于 p MOS器件退化存在三种机制 :电子陷阱俘获、空穴陷阱俘获和界面陷阱产生 .需要注意的是界面陷阱产生仍然是 p MOS器件热载流子退化的主要机制 ,不过氧化层陷阱电荷的作用也不可忽视 .

关 键 词：MOS device oxide trap interface trap hot-carrier degradation threshold voltage 

分 类 号：TN432[电子电信—微电子学与固体电子学]