霍尔离子源制备类金刚石薄膜研究  

Growth of Diamond-Like Carbon Coating Deposited with End-Hall Ion Source

作　　者：孙书龙[1] 杨会生[1] 王燕斌[1] 熊小涛[1] 

机构地区：[1]北京科技大学材料物理与化学系,北京100083

出　　处：《真空科学与技术》2003年第3期216-218,222,共4页Vacuum Science and Technology

摘　　要：采用霍尔离子源沉积类金刚石薄膜是近年来新出现的一种方法 ,本文研究了自行研制的霍尔离子源的性能以及采用此离子源制备类金刚石薄膜及工艺参数的影响。结果表明 ,霍尔离子源在较低的电压即可起辉 ,可提供稳定的能量较低的离子束流。采用霍尔离子源沉积类金刚石薄膜的沉积速率约为 0 5nm/s。随着霍尔离子源灯丝电流的升高 ,离子源放电电压下降 ,制备的类金刚石薄膜的硬度下降。放电电流的变化对类金刚石薄膜的硬度影响不大。A lab made end Hall ion source was modified and used to grow diamond like carbon(DLC)coating.The performance of the ion source and the influence of its various factors on the growth of DLC films were studied.The results show that the new ion source is capable of producing low voltage plasma and providing a stable low energy ion beam.The DLC deposition rate can be about 0.5 nm/s.As the filament current of the ion source rises,its discharge voltage drops and the hardness of the DLC coating also decreases.The hardness of the DLC films was found to be independent of the discharge current.

关 键 词：霍尔离子源 类金刚石薄膜 

分 类 号：O484.4[理学—固体物理]