砷化镓太阳电池技术的进展与前景  

Technique Development and Prospects Analysis of GaAs Solar Cell

作　　者：张忠卫[1] 陆剑峰[1] 池卫英[1] 王亮兴[1] 陈鸣波[1] 

机构地区：[1]上海空间电源研究所,上海200233

出　　处：《上海航天》2003年第3期33-38,共6页Aerospace Shanghai

摘　　要：介绍了砷化镓 (GaAs)太阳电池的特点 ,并比较了液相外延 (LPE)和金属有机物化学气相沉积(MOCVD)两种外延生长技术。叙述了国外单结、双结与三结GaAs太阳电池的结构、性能、研制及生产情况 ,分析了GaAs太阳电池的发展方向。最后根据国内GaAs太阳电池的研制进展和空间试用情况 。The characteristics and two manufacturing techniques of GaAs solar cell, liquid phase epitaxy(LPE) and metal oxide chemical vapor deposition(MOCVD), are introduced in this paper. And the foreign technique development and space application including the structure, performance, research and production of single junction, dual junction and triple junction GaAs solar cell, as well as their developing trend are mainly described. In the end, the research and development of high efficiency GaAs solar cell in China are proposed according to the domestic technique development and space experiments.

关 键 词：砷化镓太阳能电池 卫星电池 空间电源 外延生长技术 

分 类 号：TM914.4[电气工程—电力电子与电力传动] V442[航空宇航科学与技术—飞行器设计]