磁场对Ga_(1-x)Al_xAs/GaAs异质结系统中施主结合能的影响  

Magnetic Field Influence on the Binding Energies of Donors in a Ga_(1-x)Al_xAs/GaAs Heterojunction System

作　　者：张敏[1] 班士良[1] 

机构地区：[1]内蒙古大学理工学院物理系,呼和浩特010021

出　　处：《内蒙古大学学报（自然科学版）》2003年第4期390-394,共5页Journal of Inner Mongolia University：Natural Science Edition

基　　金：国家自然科学基金资助课题(60166002)

摘　　要：对半导体单异质结系统,引入三角势近似异质结势,考虑外界恒定磁场对界面附近束缚于正施主杂质的单电子基态能量的影响,利用变分法对磁场下Ga1-xAlxAs/GaAs异质结系统中杂质态的结合能进行了数值计算.并讨论了结合能随杂质位置、电子面密度和Al组分的变化关系及磁场对结合能的影响.结果表明:杂质态结合能随磁场的增强而显著增大.A variational method is used to investigate the ground state of an electron bound to a positively charged donor impurity near the interface in a single semiconductor heterojunction by considering the influence of a triangular potential and an external magnetic field.The impurity state binding energy is obtained numerically for a Ga1-xAlxAs/GaAs heterojunction system.The relations among the binding energy and the impurity position,the electron areal density,the Al composition are given respectively.It is found that the donor binding energy increases obviously with the magnetic field strength.

关 键 词：异质结 施主 磁场 结合能 

分 类 号：O471.3[理学—半导体物理]