磁控溅射陶瓷靶制备氧化铟锡薄膜的XPS和AFM研究  

XPS AND AFM CHARACTERIZATION OF INDIUM TIN OXIDE FILM BY MAGNETRON SPUTTERING CERAMIC TARGET

作　　者：常天海[1] 

机构地区：[1]华南理工大学电信学院,广东广州510640

出　　处：《真空与低温》2003年第2期98-101,共4页Vacuum and Cryogenics

摘　　要：研究了磁控溅射陶瓷靶制备的氧化铟锡薄膜的微观结构和光电性能;给出了它的XPS、AFM分光光度计测试结果。结果表明:氧化铟锡膜内部Sn以SnO2相存在,In以In2O3相存在,含量分别在5.8%和85.0%左右;薄膜表面十分致密,呈多晶球状微粒均匀分布,平均粒径为50nm;可见波段光透过率全部超过80%,近红外反射率也较高,在2500nm处达到70%,电阻率为2.7×10-4Ω·cm,禁带宽度Eg≥3.35eV。Teh microsuucture and photoelectric performance of Indium Tin Oxide film prepared by magnetron sputtering ceramic target have been studied. The testing results of X\|ray photoelectron spectroscopy, atomic force microscopy and spectrophotometer have been presented. They showed that the microstructure of Indium Tin Oxide film was characterized SnO2 and In2O3 phases, with content of 5.8% and 85.0%, respectively. The film surface was compact and characterized many equal crystal ball particulate with average diameter of 50 nm. The film had a transmittance over 80.0% to completely visible light and a rather high reflectivity (over 70% at 2 500 nm) to near infrared rays. Resistivity of the film is 2.7×10-4 Ω·cm. Forbidden bandwidth of over 3.35 eV.

关 键 词：磁控溅射 陶瓷靶 氧化铟锡薄膜 XPS AFM 分光光度计 光电性能 微观结构 

分 类 号：TN305.92[电子电信—物理电子学] TB43[一般工业技术]