AlN陶瓷基板覆铜技术的研究  

Direct Bonding Copper to Aluminium Nitride Substrate

作　　者：许昕睿[1] 庄汉锐[1] 李文兰[1] 徐素英[1] 张宝林[1] 江国健[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海200050

出　　处：《无机材料学报》2003年第4期837-842,共6页Journal of Inorganic Materials

基　　金：国家自然科学基金(69836030)

摘　　要：探索了AlN陶瓷基板表面氧化状态对敷接强度的影响。结果表明:敷接过程中Cu[O]共晶液体对未经氧化处理的AlN陶瓷基板的浸润性较差,不能形成牢固的结合;AlN陶瓷表面经氧化处理后能够显著改善与Cu[O]共晶液体的浸润性,其界面结合强度与氧化工艺密切相关,受热应力的影响,空气条件下氧化试样的敷接强度大于湿气氛下(N_2:O_2=10:1)氧化试样的敷接强度;空气下1300℃氧化30min制得的AlN-DBC试样,敷接强度达2.8kg·mm^(-2),其界面反应层的厚度约2～3μm,生成界面产物CuAlO_2,从而获得了较高的敷接强度。The effects of surface oxidation on the bonding strength were investigated. The results suggested that bonding could not be achieved without surface oxidation because of the no wetting of Cu[O] eutectic liquid. While, the wetting of the eutectic liquid could be promoted by surface oxidation, and the bonding strength was greatly affected by the surface oxidation form. Compared with specimen oxidized in wet atmosphere (N-2:O-2=10:1), the specimen oxidized in dry air achieved stronger bonding strength. The bonding strength of 2.8kg.mm(-2) was obtained for the specimen oxidized at 1300degreesC for 30 min, with the 2similar to3mum interlayer in thickness, and CuAlO2 as interface production.

关 键 词：ALN陶瓷 铜 氧化 敷接 

分 类 号：TQ174[化学工程—陶瓷工业]