合成GaP纳米晶过程的关键影响因素  

Key Factors in Preparation of GaP Nanocrystals

作　　者：刘振刚[1] 于美燕[1] 白玉俊[2] 郝霄鹏[2] 王琪珑[1] 于乃森[2] 崔得良[2] 

机构地区：[1]山东大学化学与化工学院,济南250100 [2]山东大学晶体材料国家重点实验室,济南250100

出　　处：《人工晶体学报》2003年第3期224-227,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金 (No.90 10 10 16;90 2 0 60 43 );国家 863高技术计划项目;教育部骨干教师资助计划项目;山东省科技攻关项目资助

摘　　要：本文系统研究了在有机溶剂中常压合成GaP纳米晶过程中反应温度、反应时间、反应体系的均匀性和原料的比例等关键影响因素。GaP纳米晶的产率、形貌以及平均粒度随着这些关键因素的改变有很大的不同。制备的GaP纳米晶用X射线衍射仪和透射电镜进行了表征。发现了最优化的合成工艺条件 ,实现了GaP纳米晶的高产率(达 85 % )制备 ,而且形貌和粒度可以根据需要进行调控。The key factors in preparation of GaP nanocrystals in organic solvent were studied,including reaction temperature,reaction time,uniformity of reaction system,mol ratio of reactants.It is found that the yield,microstructure and particle size of the prepared GaP nanocrystals are very different with the change of these key factors.The prepared GaP nanocrystals were characterized by X-ray diffractometer and transmission electron microscope.The optimized synthesis conditions of GaP nanocrystals were obtained.The GaP nanocrystals can be prepared at high yield of 85% and the microstructure and particle size can be controlled.

关 键 词：合成 GAP 磷化镓 纳米晶 纳米棒 X射线衍射 

分 类 号：O782.9[理学—晶体学]