多量子阱电吸收调制DFB激光器的一种新型LP-MOCVD对接生长方法  

A Novel LP-MOCVD Butt-Joint Growth Method on MQW Electroabsorption-Modulated DFB Lasers

作　　者：胡小华[1] 王圩[1] 朱洪亮[1] 王宝军[1] 李宝霞[1] 周帆[1] 田惠良[1] 舒惠云[1] 边静[1] 王鲁峰[1] 

机构地区：[1]中国科学院半导体研究所国家光电子工艺中心,北京100083

出　　处：《Journal of Semiconductors》2003年第8期841-846,共6页半导体学报（英文版）

基　　金：国家高技术研究发展计划 (No .2 0 0 1AA3 12 0 5 0 );国家重点基础研究发展规划(No .G2 0 0 0 0 683 0 1)资助项目~~

摘　　要：提出了一种提高多量子阱电吸收调制DFB LD集成器件 (EML)耦合效率的对接生长方法 .采用LP MOCVD外延方法 ,制作了对接方法不同的三种样片 ,通过扫描电镜研究它们的表面及对接界面形貌 ,发现新对接结构的样片具有更好的对接界面 .制作出相应的三种EML管芯 ,从测量所得到的出光功率特性曲线 ,计算出不同对接方法下EML管芯的耦合效率和外量子效率 .实验结果表明 ,这种对接生长方案 ,可以获得光滑的对接界面 ,显著提高了激光器和调制器之间的耦合效率 (从常规的 17%提高到 78% )及EML器件的外量子效率 (从 0 0 3mW /mA提高到 0 15mW /mA) .A novel butt joint method to improve the coupling efficiency of MQW electroabsorption modulated DFB lasers (EML) is presented.Three samples with different butt joint structures are prepared using LP MOCVD to grow all epitaxial layers.The interface appearance of butt joint areas of these samples is observed using SEM,and the sample with the new butt joint structure has better butt joint interface.Three types of EML chips are fabricated on the basis of these three samples respectively with the same procedure.Their coupling efficiency and slope quantum efficiency are calculated from the out light power characteristic curves.The results show that the new butt joint approach can obtain smoother butt joint interface and greatly improve the coupling efficiency and slope quantum efficiency of EML chips from 17% to 78% and from 0 03mW/mA to 0 15mW/mA,respectively.

关 键 词：电吸收调制DFB激光器 对接外延 LP—MOCVDf InGaAsP多量子阱 

分 类 号：TN248[电子电信—物理电子学]