聚(3,4-乙撑二氧噻吩)的合成与应用  

The Synthesis and Application of Poly(3,4-ethylenedioxythiophene)

作　　者：易捷[1] 谢原寿[1] 苏国钧[1] 

机构地区：[1]湘潭大学化学学院应用化学系,湖南湘潭411105

出　　处：《电子元件与材料》2003年第8期42-45,共4页Electronic Components And Materials

摘　　要：介绍了聚(3, 4-乙撑二氧噻吩)(poly(3, 4-ethylenedioxythiophene) 简称为PEDT)的研究过程、性质特点、表征方法、应用情况及开发前景.通过聚苯乙烯磺酸(简称PSS)掺杂,解决了聚(3, 4-乙撑二氧噻吩)的加工问题,所得PEDT/PSS膜具有电导率高(10 S/cm),透明性好(在可见光范围内几乎是透明的)、机械强度较高,且有很好的抗水解性和光稳定性及热稳定性(在110~200℃的高温下能耐1 000 h以上,其膜电导率几乎不变),已在固体电解电容器等方面获得成功应用.The development history, performances, applications, and tendency of poly (3,4-ethylenedioxythiophene) are presented. The problem with process was solved by doping with polystyrene sulfonic acid. The obtained PEDT/PSS film is characterized by its high conductivity (10 S/cm), high light transmissivity (almost transparent in the range of visible light), high mechanical strength, high resistance to hydrolysis, high light stability and thermal stability (almost no change in resistance supposed to 110 to 200 C, 1 000 h). The film is successfully used in solid electrolytic capacitors.

关 键 词：聚(3 4-乙撑二氧噻吩)(PEDT) 导电聚合物 固体电解电容器 抗静电涂层 

分 类 号：TM24[一般工业技术—材料科学与工程]