Ce∶Cu∶SBN晶体生长及全息存储性能的研究  

Study on Growth and Holographic Storage Properties of SBN Crystal

作　　者：周玉祥[1] 刘欣荣[1] 朱质彬[1] 

机构地区：[1]哈尔滨工业大学应用化学系光电信息中心,哈尔滨150001

出　　处：《压电与声光》2003年第3期218-220,共3页Piezoelectrics & Acoustooptics

基　　金：国家"九七三"资助项目(G19990330和8632001AA31304)

摘　　要：在SBN中掺杂的w(CeO2)、w(CuO)为0.1%,采用硅钼棒作加热体,以提拉法生长Ce∶Cu∶SBN、Ce∶SBN和Cu∶SBN晶体,测试晶体的衍射效率和响应时间。Ce∶Cu∶SBN晶体的最大衍射效率达65%,响应时间为1.3s,以Ce∶Cu∶SBN晶体作记录元件,以Cu∶SBN晶体作为位相共轭反射镜,实现全息关联存储。Ce∶Cu∶SBN晶体的存储性能优于SBN、Ce∶SBN和Cu∶SBN晶体。其响应速度比Fe∶LiNbO3晶体快一个数量级以上。对Ce离子和Cu离子在SBN晶体的占位和Ce∶Cu∶SBN晶体存储性能增强机理进行探讨。The SiMo bar was used as heater and the Czochralski method was adopted to grow Ce∶Cu∶SBN, Ce∶SBN and Cu∶SBN crystals by doping CeO2 (01%) and CuO(01%) in SBN Diffraction efficiency and response time of the crystals were measured The maximum diffraction efficiency of Ce∶Cu∶SBN crystal is up to 65% and its response time is 13 s Holographic associative memory was realized by using Ce∶Cu∶SBN crystal as recording component and Cu∶SBN crystal as phase conjugation reflector Ce∶Cu∶SBN crystal is more excellent than SBN, Ce∶SBN and Cu∶SBN crystals in holographic property aspects Its response speed is one order of magnitude higher than that of Fe:LiNbO3 crystal In addition, this paper discussed the occupation site of Ce and Cu ions in SBN crystals and the holographic storage property strengthening mechanism of Ce∶Cu∶SBN crystal

关 键 词：Ce∶Cu∶SBN晶体 存储性能 衍射效率 晶体生长 响应时间 —次迭代全息 

分 类 号：O735[理学—晶体学] O482.4