用基片曲率法测量薄膜应力  

Stress Measurement of Thin Films by Substrate Curvature Method

作　　者：安兵[1] 张同俊[1] 袁超[1] 崔昆[1] 

机构地区：[1]华中科技大学模具技术国家重点实验室,湖北武汉430074

出　　处：《材料保护》2003年第7期13-15,共3页Materials Protection

基　　金：国家自然科学基金资助项目(59971021)

摘　　要：　采用基片曲率法设计和制作了一种测量薄膜应力的装置,它具有简单、无损伤、快速、易于操作、精度高的优点。使用该装置测量了射频磁控溅射镀制的Cu单层膜和Ag/Cu多层膜的应力,结果表明薄膜残余应力是均匀的,但随沉积条件不同而不同。Cu单层膜和Ag/Cu多层膜处于压应力状态,外加-200V偏压时,Ag/Cu多层膜则转变为很小的拉应力状态。XRD表明Ag/Cu多层膜已结晶,呈现Ag(111)/Cu(111)择优取向。An optical apparatus based on substrate curvature method (SCM) was developed for stress measurement of thin films, which offered a lot of advantages as simple structure, nondestructive, quick response, easy operation and high precision. Using the apparatus, the stress in Cu films and Ag/Cu multilayer thin films prepared by RF magnetron sputtering were detected. It was found that the residual stress in these films was homogenous, but varied with the deposition condition. Commonly samples of these films were in a state of compression, but when an additional bias of -200V was imposed on one of them, it turned to present a small tensile stress. The XRD pattern showed that Ag/Cu multilayer thin films were crystallized, and exhibited Ag(111)/Cu(111) preferred orientations.

关 键 词：基片曲率法 薄膜 残余应力 

分 类 号：TB43[一般工业技术]