利用红外反射光谱法研究6H-SiC表面的SiO_2特性  

A Study of SiO_2 Film on 6H-SiC by Infrared Reflectance

作　　者：刘洪军[1] 王鸥[1] 邬瑞彬[1] 龚敏[1] 

机构地区：[1]四川大学物理系,成都610064

出　　处：《四川大学学报（自然科学版）》2003年第4期707-710,共4页Journal of Sichuan University(Natural Science Edition)

摘　　要：通过干氧氧化的方法,在6H SiC表面生长一层SiO2层,接着置于N2气氛中经过不同的温度退火,使用红外显微仪分别测量退火前后的红外反射谱,通过观测表面氧化层SiO2的红外反射谱图中特征反射峰位(1090cm-1附近)的变化,以判断退火前后表面氧化层密度的变化情况,进一步推断氧化层的结构变化与杂质类型.A thin SiO2 film was grown on the 6HSiC by dry oxidation. It was annealed in different temperature around in N2. Infrared reflectance was used in measured the characteristics of the SiO2 layer on SiC.A peak appeared at about 1090cm-1 can be used to monitor the density of the SiO2 layer.After annealing in N2,the peak shifted towards high frequency.This shift became distinct after annealing at 1100℃,which showed a decrase of the density and was considered that the interstitial impurity had diffused from SiO2.

关 键 词：6H-SIC SIO2 红外反射 退火 密度 

分 类 号：O485[理学—固体物理]