CMOS兼容光电单片接收机的模拟与设计  

Simulation and Design of CMOS-Process-Compatible Mono lithic Photoreceivers

作　　者：李炜[1] 毛陆虹[1] 陈弘达[2] 孙增辉[2] 高鹏[1] 陈永权[1] 

机构地区：[1]天津大学电子与信息工程学院,天津300072 [2]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《Journal of Semiconductors》2003年第9期960-965,共6页半导体学报（英文版）

基　　金：国家高技术研究发展计划 (批准号 :2 0 0 2AA312 2 4 0 ;2 0 0 1AA12 2 0 32 ;2 0 0 1AA312 0 80 );国家自然科学基金 (批准号 :6 9896 2 6 0 )资助项目~~

摘　　要：设计了与CMOS工艺兼容的光电单片接收机电路 ,其中包括光电探测器、前置放大器和主放大器 .它采用0 6μmCMOS工艺 ,可在自备的高阻外延片上使用MPW(multi project wafer)进行流水 .其中光电探测器的工作波长为 850nm ,响应度为 0 2A/W ,接收灵敏度为 - 1 6dBm ,带宽为 80 0MHz ,因此适用于VSR(very short reach)系统 .前置放大器采用电流模反馈放大器 ,主放大器输出为LVDS(low voltage differential signals)电平 .通过器件模拟与电路模拟统一的方法将光电探测器与接收机放大电路进行统一模拟 ,分析了电路的限制因素 ,并提出了相应的改进方法 .Circuits of CMOS-process-compatible monolithic photoreceivers are designed.The circuits include photodetector,pre-amplifier and main amplifier.CMOS circuits integrating vertical pin photodiode are made in the epitaxial layer with thickness of 7μm and doping concentration of 2×10 13cm -3 by using 0.6μm CMOS process,which can be fabricated in MPW mode.The photodetector has features as fellow:absorbed-peak wavelength of 850nm,responsivity of 0.2A/W,sensitivity of -16dBm,and frequency response of 800MHz,which can be applied to VSR system.The optical wavelength response,the frequency response versus the thickness and doping concentration of epitaxial layer are obtained respectively.And the model parameters are extracted by device simulation.The pre-amplifier adopts current mode feedback amplifier.The output voltage of main amplifier is in the level of LVDS.A new method for simulation of photodetector and amplifier circuits is presented as the first time,the limiting factors are analyzed and some methods for optimizing circuits are considered.

关 键 词：单片集成 光电探测器 器件模拟 

分 类 号：TN432[电子电信—微电子学与固体电子学]