射频磁控溅射有机衬底SnO_2∶Sb透明导电膜性能的研究  

Thickness effect influence on the properties of SnO_2∶Sb films deposited on flexible substrates

作　　者：张士勇[1] 马瑾[2] 刘晓梅[3] 马洪磊[2] 郝晓涛[2] 

机构地区：[1]长安大学理学院,陕西西安710064 [2]山东大学物理与微电子学院光电材料与器件研究所,山东济南250100 [3]山东大学计算机科学与技术学院,山东济南250100

出　　处：《功能材料》2003年第4期452-453,457,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(60276044);教育部科学技术研究重点资助项目(重点02165)

摘　　要：　采用射频磁控溅射法在聚丙烯己二酯有机薄膜(polypropyleneadipate,PPA)衬底上低温制备出锑掺杂的氧化锡(SnO2∶Sb)透明导电膜。研究了薄膜的厚度效应对SnO2∶Sb薄膜的结构、光学和电学特性的影响。制备薄膜为多晶膜,并且保持了纯二氧化锡的金红石结构。载流子浓度和迁移率随着薄膜厚度的增加而增大,电阻率随着薄膜厚度的增加而减小,最低电阻率为2×10-3Ω·cm。Transparent conducting SnO2∶ Sb films have been deposited on polypropylene adipate( PPA) substrates by r. f. magnetron sputtering technique. Polycrystalline SnO2∶Sb films having rutile structure were prepared at lower substrate temperature. The thickness dependence of structural, optical and electrical properties of the SnO2∶ Sb films on polypropylene adipate substrates have been studied in detail. With increasing the thickness, the mobility and the carrier concentration increase and the resistivity of the films decreases. The lowest resistivity was 2.5×10-3Ω·cm.

关 键 词：SnO2:Sb透明导电膜 射频磁控溅射 有机衬底 光电性质 

分 类 号：TN304[电子电信—物理电子学]