Ni_(80)Fe_(20)/Al_2O_3/Ni_(80)Fe_(20)磁隧道结电磁特性研究  

Research of Electromagnetic Characteristic of Ni_(80)Fe_(20)/AI_2 O_3/Ni_(80)Fe_(20) Tunnel Junctions

作　　者：翁兆平[1] 王义杰[1] 李燕飞[1] 

机构地区：[1]哈尔滨理工大学应用科学学院,黑龙江哈尔滨150080

出　　处：《哈尔滨理工大学学报》2003年第4期116-118,共3页Journal of Harbin University of Science and Technology

基　　金：黑龙江省自然科学基金资助(F01-21)

摘　　要：采用磁控溅射技术制备了Ni80Fe20/Al2O3/Ni80Fe20磁性多层膜隧道结样品,并使样品在不同的温度下退火,研究了不同退火条件对样品隧道结磁电阻效应的影响.结果表明,磁电阻值随退火温度发生变化,并在230℃左右达到最大.为提高磁隧道结磁电阻性能提供了新的尝试.The samples of the Ni80Fe20/Al2O3/Ni80Fe20 magnetic tunnel junction were prepared with the magnetron-sputtering technique and annealed then under various condition. The analysis of the TMR effect is presented in this paper. The result shows that tunnel magnetic resistance changes with annealing temperature and it reaches max near 230℃. It offers a new try for developing the performance of the magnetic tunneling junctions.

关 键 词：磁控溅射技术 磁隧道结 退火 磁电阻效应 膜结构 

分 类 号：O484.4[理学—固体物理] O441.6[理学—物理]