大尺寸硅片背面磨削技术的应用与发展  

Application and evolution of back grinding technology for large size wafer

作　　者：康仁科[1] 郭东明[1] 霍风伟[1] 金洙吉[1] 

机构地区：[1]大连理工大学机械工程学院,辽宁大连116024

出　　处：《半导体技术》2003年第9期33-38,51,共7页Semiconductor Technology

基　　金：国家自然科学基金重大项目(50390061);国家"863计划"项目(2002AA421230)资助

摘　　要：集成电路芯片不断向高密度、高性能和轻薄短小方向发展,为满足IC封装要求,图形硅片的背面减薄成为半导体后半制程中的重要工序。随着大直径硅片的应用,硅片的厚度相应增大,而先进的封装技术则要求更薄的芯片,超精密磨削作为硅片背面减薄主要工艺得到广泛应用。本文分析了几种常用的硅片背面减薄技术,论述了的基于自旋转磨削法的硅片背面磨削的加工原理、工艺特点和关键技术,介绍了硅片背面磨削技术面临的挑战和取得的新进展。As IC chips are fast developing toward higher density, higher performance and smallersize, to meet the demands of IC package, back thinning of the patterned wafer is one of most impor-tant procedure in the backend of semiconductor manufacturing process. When the thickness of primewafer increase corresponding to larger diameter of wafer and the chip become thinner because ofrequirement of advanced IC package technology, back grinding is applied as main back thinningtechnology. In this paper, common back thinning technologies are discussed, the principle, charac-teristics and key technology of the wafer back grinding based on the wafer rotation grinding methodare described in detail, and the new evolutions of the wafer back grinding facing the new challengesare introduced.

关 键 词：图形硅片 磨削技术 IC封装 硅片背面 减薄技术 加工原理 

分 类 号：TN305[电子电信—物理电子学]