立方相GaN/β-SiC(100)(2×1)混合界面的电子结构  

Electronic Structure of GaN/β-SiC (100)(2×1) Interfaces with Atom Interchange

作　　者：宋友林[1] 杨仕娥[2] 贾瑜[2] 

机构地区：[1]河南教育学院物理系,郑州450053 [2]郑州大学物理工程学院,郑州450052

出　　处：《郑州大学学报（理学版）》2003年第3期38-42,共5页Journal of Zhengzhou University:Natural Science Edition

基　　金：河南省自然科学基金资助项目;编号 0 1110 5 0 40 0;河南省青年骨干教师基金项目

摘　　要：讨论了含有一个混合层的GaN/ β SiC(10 0 ) (2× 1)重构界面模型 ,在此基础上提出了 (2× 1)混合界面在层轨道表象中的微扰势形式 ,计算了立方相GaN/ β SiC(10 0 )异质结中N/Si界面的电子结构和波矢分辨的层态密度 ,详细讨论了混合界面的原子结构对界面电子结构和层态密度的影响 .结果表明 :混合界面降低了表面态的对称性 ,能量简并消失并产生新的界面态 .层态密度计算结果显示 ,几乎所有界面态都局域在界面附近 ,界面上新形成的化学键使半共振态在界面的一侧高度局域 。The interface model of GaN/β-SiC (100)(2×1) with atom interchange is discussed by using Green function method of the scattering theory. The electronic structure of cubic GaN/β-SiC (100)(2×1) interface is studied with atom interchange and the interface band structures and wavevector-resolved layer densities of states are presented. By comparing with the electronic states of ideal interfaces,the influence of atom interchange is discussed on interface electronic structure and layer densities of states. The results show that the interface with atom interchange lowers the symmetry of surface states and produces new interface states by the energe removing.The new bonds are different from the bulk bolds at the interface. All the surface states are localized near the interface.

关 键 词：半导体 立方相结构 GaN/β-SiC(100)(2×1) 混合界面 电子结构 重构界面模型 层态密度 

分 类 号：O471.5[理学—半导体物理]