三代微光管均匀性测试与分析  

Measurement and Analysis of Uniformity of Third-Generation LLL Tube

作　　者：杜晓晴[1] 杜玉杰[1] 常本康[1] 宗志园[1] 

机构地区：[1]南京理工大学电子工程与光电技术学院

出　　处：《真空科学与技术》2003年第4期248-250,263,共4页Vacuum Science and Technology

基　　金：国家教育委员会指定的博士生基金课题 (No.19990 2880 5) ;国防"十五"重点预研及演示验证项目

摘　　要：利用自行研制的“光电阴极多信息量测试系统”首次对国产三代微光管中的GaAs光电阴极的均匀性进行了光谱响应测试 ,结果表明该国产三代微光管存在明显的非均匀性。利用曲线拟合方法估算了GaAs光电阴极的材料性能参数 ,发现表面逸出概率不一致是非均匀性的主要原因 ,GaAs材料的少子扩散长度 (1 1 2～ 1 82 ) μm ,与阴极厚度相当 ,后界面复合速率在 (1× 1 0 5～ 1× 1 0 6 )cm/s之间 。Uniformity of the low-light-level (LLL) photo-cathode tubes, made of GaAs/AlGaAs/CaAs films, was studied by measuring its spectral response with our lab-made multi-functional photo-cathode evaluation system. The technical performance of the materials was evaluated by data fitting. The results show that pronounced non-uniformity exists, possibly resulting from the variations in the surface emission probabilities. The diffusion length of the minority carriers in GaAs films was estimated to be (1.12-1.82) μm, roughly close to the film thickness. However, high recombination rate at the interface of GaAs film and the substrate, (1×105-1×106) cm/s, may inversely affect the sensitivity of the tube.

关 键 词：微光管 均匀性 GAAS 光谱响应 评估 

分 类 号：TN214[电子电信—物理电子学]