大电流阴极的发射性能研究  

Study of Emitting Performance of High Current Cathode

作　　者：张红卫[1] 丁耀根[2] 白振纲[2] 

机构地区：[1]中国科学院研究生院,北京100080 [2]中国科学院电子所,北京100080

出　　处：《电子器件》2003年第3期248-252,共5页Chinese Journal of Electron Devices

摘　　要：研究了新型钡钨阴极发射性能,并且分别用扫描电子显微镜(SEM)和工业CT微焦点系统来分析所研制的新型钡钨阴极的表面形貌和内部微细结构。该阴极不仅简化了传统浸渍钡钨阴极生产工艺,而且发射性能要优于传统工艺阴极。We studied the emitting performance of high current cathode, and analysed its surface and inner micro structures by the industrial computer tomography (ICT) and SEM. This new cathode can simplify the traditional manufacture procedure of the cathode, and its emitting performauce is also more better than the traditional cathodes.

关 键 词：钡钨阴极 工业CT 扫描电镜 图像分析 

分 类 号：TN14[电子电信—物理电子学]