EACVD低温合成金刚石薄膜中非线性电场的数值模拟  

Numerical Simulation of Nonlinear Electric Field in Diamond Film Growth at Low Temperature via EACVD

作　　者：赵庆勋[1] 张靖[1] 辛红丽[1] 文钦若[1] 杨景发[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《计算物理》2003年第5期399-402,共4页Chinese Journal of Computational Physics

基　　金：河北省自然科学基金(503130)资助项目

摘　　要：　采用蒙特卡罗模拟方法,研究了电子辅助热丝化学气相沉积(EACVD)技术低温合成金刚石薄膜过程中反应区的非线性电场分布.结果表明:阳极基片附近反应区电场的空间分布按指数规律变化,在一定的偏压条件下,随着气压的变化阳极附近将出现反向电场,对于金刚石薄膜的低温合成中的正离子分子,该反向电场起重要作用.Monte Carlo simulations are adopted to study the distribution of the nonlinear electric field in the reaction field of diamond film growth at low temperature via EACVD. The results indicate that the distribution of the electric field near the anode in the reaction field changes by exponential rules. Under certain bias voltages with the changing of pressure, there will be a reverse electric field near the anode. This reverse electric field is very important to some positive ions in diamond film growth at low temperature.

关 键 词：EACVD 金刚石薄膜 低温合成 非线性电场 数值模拟 电子辅助热丝化学气相沉积 

分 类 号：O484.1[理学—固体物理] O484.42[理学—物理]