新型材料InGaNAs的生长与应用前景  

Growth and Application of Novel Material: InGaNAs

作　　者：王勇刚[1] 马骁宇[1] 韦欣[1] 文芳[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《红外》2003年第10期17-20,共4页Infrared

摘　　要：详细介绍了一种新型半导体材料(InGaNAs)的生长特点及其在制作高特征温度的长波长量子阱激光器、长波长垂直腔面发射激光器、长波长光泵垂直外腔面发射激光器、半导体可饱和吸收镜和长波长谐振腔增强探测器方面的优势。A novel semiconductor material (InGaNAs) is introduced detailly as well as its trait of growth and advantage in manufacturing the devices such as long wavelength quantum well laser with high characteristic temperature, long wavelength vertical cavity surface emission laser (VCSEL), long wavelength light-pumped vertical external cavity surface emission laser (LP-VECSEL), semiconductor saturable absorption mirror (SESAM) and long wavelength resonant cavity enhance photo detector (RCE-PD).

关 键 词：InGaNAs 半导体材料 生长特点 晶格匹配 应用前景 砷氮镓铟化合物 长波长量子阱激光器 长波长垂直腔面发射激光器 半导体可饱和吸收镜 长波长谐振腔增强探测器 

分 类 号：TN248.4[电子电信—物理电子学]