电场和注量对硅辐照缺陷形成的影响  

THE INFLUENCE OF ELECTRIC FIELD AND FLUX ON THE FORMATION RADIATION DEFECTS IN SILICON

作　　者：吴凤美[1] 赖启基[1] 施毅[1] 王振洲 

机构地区：[1]南京大学物理系

出　　处：《南京大学学报（自然科学版）》1992年第1期45-50,共6页Journal of Nanjing University（Natural Science）

摘　　要：本文调查了电场、注量和注量率对硅电子辐照缺陷形成的影响。实验结果表明,辐照电场的存在将造成缺陷在空间电荷区的不均匀分布。在大辐照注量和注量率下,某些辐照缺陷形成率将明显降低。本文还在理论上进行了分析。In this paper,the influence of electric field,flux and flux rate on the forma- tion of electron radiation defects in silicon have been investigated.Experiment results show that the application of an electric field causes nonuniform distribution of the density of the defects in the space charge region.Under high flux or flux rate radiation,the efficiency of formation of some radiation defects reduce obviously.The theory relevaut to these results is also analysed.

关 键 词：电场 注量 硅 辐照缺陷 形成系数 

分 类 号：O474[理学—半导体物理]